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 HSL278
Silicon Schottky Barrier Diode for Detector
REJ03G0606-0100 (Previous: ADE-208-1564) Rev.1.00 Apr 20, 2005
Features
* Low forward voltage, Low capacitance. * Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Type No. HSL278 Laser Mark S Package Name EFP Package Code (Previous Code) PXSF0002ZA-A (EFP)
Pin Arrangement
Cathode mark Mark 1
S
2 1. Cathode 2. Anode
Rev.1.00 Apr 20, 2005 page 1 of 4
HSL278
Absolute Maximum Ratings
(Ta = 25C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Peak forward current Junction temperature Storage temperature Note: 10 ms sine wave 1 pulse Symbol VRRM VR IO Value 30 30 30 200 150 125 -55 to +125 Unit V V mA mA mA C C
IFSM * IFM
Tj Tstg
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Reverse current Capacitance 1 ESD-Capability * Symbol VF1 VF2 IR C Min 100 Typ Max 0.30 0.95 700 1.5 Unit V nA pF V Test Condition IF = 1 mA IF = 30 mA VR = 10 V VR = 1 V, f = 1 MHz C = 200 pF, RL = 0 , Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR 1.4 A at VR =10 V 2. Please do not use the soldering iron due to avoid high stress to the EFP package. 3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
Rev.1.00 Apr 20, 2005 page 2 of 4
HSL278
Main Characteristic
101 100 10-1 10-5 Ta = 75C 10-4
Forward current IF (A)
10
-2
Ta = 75C Ta = 25C
10-3 10
-4
Reverse current IR (A)
10-6 Ta = 25C 10-7
10-5 10-6 10-7 10-8 0 0.2 0.4 0.6 0.8 1.0
10-8
0
5
10
15
20
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f=1MHz 10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00 Apr 20, 2005 page 3 of 4
HSL278
Package Dimensions
JEITA Package Code RENESAS Code PXSF0002ZA-A Previous Code EFP / EFPV MASS[Typ.] 0.0007g
D b
E
HE
c
A
b
e1
Reference Symbol
Dimension in Millimeters
Pattern of terminal position areas
A b c D E HE b e1
Min 0.44 0.25 0.08 0.55 0.75 0.95
Nom 0.47 0.30 0.13 0.60 0.80 1.00 0.40 1.00
Max 0.50 0.35 0.18 0.65 0.85 1.05
Rev.1.00 Apr 20, 2005 page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0


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